
Contact UsProduct Catalogue
From discrete semiconductors to complex integrated circuits — precision-engineered components for defence, automotive, and industrial applications.
Logic ICs
Integrated Circuits
ADC
Analog-to-Digital
DAC
Digital-to-Analog
MOSFETs
Discrete Transistors
Diodes
Discrete Components
IGBTs
Power Transistors
High-speed CMOS logic circuits for general-purpose applications.
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VS-LC01
High-speed CMOS AND gate with Schmitt trigger inputs. Ideal for noise-immune signal conditioning in industrial and automotive environments operating at 2V–6V supply.

in production

VS-LC02
Six independent CMOS inverter buffers with push-pull outputs and high current drive capability. Suitable for bus driving, level shifting, and clock distribution up to 100 MHz.

in production
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VS-LC03
Dual positive-edge-triggered D flip-flop with individual set and reset inputs. Features asynchronous clear and preset, making it ideal for state machines and data latch applications in AEC-Q100-grade systems.

in production
Precision analog-to-digital converters.
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VS-AD01
12-bit successive approximation ADC with 1 MSPS throughput rate, SPI interface, and internal 2.5V reference. Low power consumption of 1.8 mW makes it ideal for battery-powered sensor nodes and IoT edge devices.

in production
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VS-AD02
4-channel, 16-bit delta-sigma ADC with programmable gain amplifier (1×–128×), I²C/SPI interface, and on-chip oscillator. Designed for precision industrial measurement, load cells, and thermocouple signal conditioning.

in production
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VS-AD03
Octal-channel 10-bit SAR ADC with on-chip multiplexer, internal temperature sensor, and parallel bus interface. Optimised for multi-sensor data acquisition in automotive body control and industrial PLCs.

in production
Digital-to-analog converters for precision output.
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VS-DA01
Single-channel 12-bit DAC with buffered voltage output, power-on reset to zero-scale, and SPI interface. Features a 2 µs settling time and low 30 µA supply current for portable and precision instrumentation.

in production
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VS-DA02
Quad-channel 16-bit DAC with simultaneous update capability, internal 5V reference, and I²C interface. Designed for precision closed-loop control, automatic test equipment, and multi-channel waveform synthesis.

in production
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VS-DA03
High-speed 8-bit current-steering DAC with 125 MSPS update rate and LVDS digital interface. Optimised for direct RF upconversion, arbitrary waveform generation, and communications base station applications.

in production
Power MOSFETs for switching applications.
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VS-MF01
60V N-channel MOSFET with ultra-low Rds(on) of 4.5 mΩ at 10V gate drive. Features robust 100% unclamped inductive switching (UIS) testing and logic-level gate compatibility for 5V MCU-direct drive in DC-DC converters and synchronous rectifiers.

in production
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VS-MF02
-30V P-channel MOSFET in compact DFN package with Rds(on) of 12 mΩ. Designed for high-side switching, load switches, and battery protection circuits in portable and automotive applications with operating range -40°C to +150°C.

in production
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VS-MF03
650V silicon-carbide (SiC) N-channel MOSFET with Rds(on) of 80 mΩ. Superior switching performance and reduced switching losses for high-efficiency solar inverters, EV chargers, and 3-phase motor drives.

in production
Reliable discrete diode components.
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VS-DI01
40V, 5A Schottky rectifier with low forward voltage drop of 0.45V at 5A and ultra-fast reverse recovery. Optimised for high-frequency SMPS output rectification, freewheeling in motor drives, and ORing circuits.

in production
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VS-DI02
5.1V, 1W precision Zener voltage regulator with tight 2% tolerance and low dynamic impedance of 7Ω at 20 mA. Suitable for voltage reference, clamping, and overvoltage protection in signal circuits and power supplies.

in production
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VS-DI03
600W peak pulse power TVS diode with 15V standoff voltage, bidirectional operation, and sub- nanosecond response time. AEC-Q101 qualified for ESD and surge protection in automotive CAN, LIN, and FlexRay bus lines.

in production
High-performance power switching devices.
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VS-IG01
600V, 20A trench-gate IGBT with typical Vce(sat) of 1.65V and short-circuit withstand time of 10 µs. Fast switching with tail current optimisation for high- frequency (up to 60 kHz) inverter, UPS, and induction heating applications.

in production
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VS-IG02
1200V, 50A co-pack IGBT module with integrated fast-recovery anti-parallel diode. Low Vce(sat) of 1.9V and soft-switching characteristics designed for three-phase motor drives, solar inverters, and traction systems.

in production
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VS-IG03
AEC-Q101 qualified 650V IGBT in compact D²PAK package for automotive DC-DC converters, on- board chargers, and electric power steering. Features -40°C to +175°C operation, PPAP-capable production, and 100% Htrg tested.

in production